Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System.

导出 OA

翻译打印收藏纠错

第一作者： Chandreswar,Mahata

第一单位： Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, Republic of Korea.

作者： Chandreswar,Mahata ^[1] ; Muhammad,Ismail ^[1] ; Myounggon,Kang ^[2] ; Sungjun,Kim ^[3]

作者单位： Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, Republic of Korea. ^[1] Department of Electronics Engineering, Korea National University of Transportation, Chungju-si, 27469, Republic of Korea. mgkang@ut.ac.kr. ^[2] Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, Republic of Korea. sungjun@dongguk.edu. ^[3]

关键词 ALD TiN-nanoparticles Al-doped HfO2 Quantum conductance Resistive switching Synaptic plasticity

DOI 10.1186/s11671-022-03696-2

PMID 35687194

发布时间 2024-08-29

翻译满意度评价：

准确一般字义偏差语意偏离译文作用小提交