作者：
Onejae,Sul [1]
;
Hojun,Seo [2]
;
Eunsuk,Choi [2]
;
Sunjin,Kim [2]
;
Jinsil,Gong [2]
;
Jiyoung,Bang [3]
;
Hyoungbeen,Ju [3]
;
Sehoon,Oh [3]
;
Yeonsu,Lee [3]
;
Hyeonjeong,Sun [2]
;
Minjin,Kwon [2]
;
Kyungnam,Kang [4]
;
Jinki,Hong [5]
;
Eui-Hyeok,Yang [4]
;
Yunchul,Chung [6]
;
Seung-Beck,Lee [7]
作者单位：
Hanyang University, Seoul, 04763, Republic of Korea.
[1]
Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
[2]
Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
[3]
Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ, 07030, USA.
[4]
Department of Display and Semiconductor Physics, Korea University Sejong Campus, Sejong City, 30019, Republic of Korea.
[5]
Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, NJ, 07030, USA.
[6]
Department of Physics, Pusan National University, Busan, 46241, Republic of Korea.
[7]
DOI
10.1002/smll.202202153
PMID
35754305
发布时间
2022-07-21
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