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Ultrahigh Photogain Short-Wave Infrared Detectors Enabled by Integrating Graphene and Hyperdoped Silicon.

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第一作者： Hao,Jiang

第一单位： Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China.;School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China.

作者： Hao,Jiang ^[1] ; Mao,Wang ^[2] ; Jintao,Fu ^[3] ; Zhancheng,Li ^[4] ; Mohd Saif,Shaikh ^[2] ; YunJie,Li ^[5] ; Changbin,Nie ^[3] ; Feiying,Sun ^[4] ; Linlong,Tang ^[4] ; Jun,Yang ^[4] ; Tianshi,Qin ^[6] ; Dahua,Zhou ^[4] ; Jun,Shen ^[4] ; Jiuxun,Sun ^[7] ; Shuanglong,Feng ^[4] ; Meng,Zhu ^[8] ; Ulrich,Kentsch ^[2] ; Shengqiang,Zhou ^[2] ; Haofei,Shi ^[4] ; Xingzhan,Wei ^[3]

作者单位： Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China.;School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China. ^[1] Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany. ^[2] Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China.;University of Chinese Academy of Sciences, Beijing 100049, P. R. China. ^[3] Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China. ^[4] Chongqing University of Posts and Telecommunications, Chongqing 400065, China.;Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China. ^[5] Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing 210009, China. ^[6] School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China. ^[7] TianJin Jinhang Insitute of Technical Physics, Tianjin 300192, China. ^[8]

关键词 Te-hyperdoped Si built-in potential graphene lifetime photogain short-wave infrared detector

DOI 10.1021/acsnano.2c04704

PMID 35900823

发布时间 2022-11-10

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