Gate-Tunable Anomalous Hall Effect in a 3D Topological Insulator/2D Magnet van der Waals Heterostructure.

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作者： Vishakha,Gupta ^[1] ; Rakshit,Jain ^[1] ; Yafei,Ren ^[2] ; Xiyue S,Zhang ^[1] ; Husain F,Alnaser ^[3] ; Amit,Vashist ^[3] ; Vikram V,Deshpande ^[4] ; David A,Muller ^[4] ; Di,Xiao ^[1] ; Taylor D,Sparks ^[5] ; Daniel C,Ralph ^[2]

作者单位： Cornell University, Ithaca, New York 14850, United States. ^[1] Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States. ^[2] Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States. ^[3] Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112, United States. ^[4] Kavli Institute at Cornell, Ithaca, New York 14853, United States. ^[5] Department of Physics, University of Washington, Seattle, Washington 98195, United States. ^[6]

关键词 2D magnets Topological insulators anomalous Hall effect exchange gap van der Waals heterostructures

DOI 10.1021/acs.nanolett.2c02440

PMID 35994426

发布时间 2022-09-14

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