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Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes.

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第一作者： Xiwen,Liu

第一单位： Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.

作者： Xiwen,Liu ^[1] ; John,Ting ^[1] ; Yunfei,He ^[1] ; Merrilyn Mercy Adzo,Fiagbenu ^[1] ; Jeffrey,Zheng ^[2] ; Dixiong,Wang ^[1] ; Jonathan,Frost ^[1] ; Pariasadat,Musavigharavi ^[3] ; Giovanni,Esteves ^[4] ; Kim,Kisslinger ^[5] ; Surendra B,Anantharaman ^[1] ; Eric A,Stach ^[6] ; Roy H,Olsson ^[1] ; Deep,Jariwala ^[1]

作者单位： Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States. ^[1] Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States. ^[2] Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.;Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States. ^[3] Microsystems Engineering, Science and Applications (MESA), Sandia National Laboratories, Albuquerque, New Mexico 87185, United States. ^[4] Brookhaven National Laboratory, Center for Functional Nanomaterials, Upton, New York 11973, United States. ^[5] Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.;Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States. ^[6]

关键词 Compute in memory ferroelectric diode neural network nonvolatile parallel search reconfigurable architecture ternary content-addressable memory

医学主题词铝(Aluminum);逻辑学(Logic);钪(Scandium);硅(Silicon)

DOI 10.1021/acs.nanolett.2c03169

PMID 36121208

发布时间 2024-09-14

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