Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD.

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作者： Ajay,Kumar ^[1] ; Neha,Gupta ^[2] ; Amit Kumar,Goyal ^[3] ; Yehia,Massoud ^[3]

作者单位： ECE Department, Jaypee Institute of Information Technology, Noida 201309, India. ^[1] ASH Department, Dr. Akhilesh Das Gupta Institute of Technology & Management, New Delhi 110053, India. ^[2] Innovative Technologies Laboratories (ITL), King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia. ^[3]

关键词 GaN-SOI-FinFET RF cut-off frequency maximum oscillator frequency power gains

DOI 10.3390/mi13091418

PMID 36144042

发布时间 2022-09-28

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2022年13卷9期

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Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD.

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Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD.

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