A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect.

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第一作者： Boyang,Ma

第一单位： Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, China.

作者： Boyang,Ma ^[1] ; Shupeng,Chen ^[1] ; Shulong,Wang ^[1] ; Tao,Han ^[1] ; Hao,Zhang ^[1] ; Chenyu,Yin ^[1] ; Yaolin,Chen ^[1] ; Hongxia,Liu ^[1]

作者单位： Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, China. ^[1]

关键词 InGaAs/GaAsSb L-shaped gate analog/RF performance band-to-band tunneling

DOI 10.3390/mi13091474

PMID 36144097

发布时间 2022-09-28

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2022年13卷9期

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A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect.

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A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect.

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