Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells.

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第一作者： Yachen,Wang

第一单位： State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

作者： Yachen,Wang ^[1] ; Feng,Liang ^[2] ; Degang,Zhao ^[1] ; Yuhao,Ben ^[1] ; Jing,Yang ^[3] ; Zongshun,Liu ^[1] ; Ping,Chen ^[2]

作者单位： State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. ^[1] Collage of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China. ^[2] School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China. ^[3]

关键词 InGaN quantum well hydrogen treatment photoluminescence surface morphology

DOI 10.3390/nano12183114

PMID 36144901

发布时间 2022-09-28

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Nanomaterials (Basel, Switzerland)

2022年12卷18期

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Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells.

Nanomaterials (Basel, Switzerland)

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Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells.

Nanomaterials (Basel, Switzerland)

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