Microelectronic current-sourcing device based on band-to-band tunneling current.

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第一作者： Onejae,Sul

第一单位： Institute of Nano Science and Technology, Hanyang University, Seoul, Republic of Korea.

作者： Onejae,Sul ^[1] ; Yeonghun,Lee ^[2] ; Sangduk,Kim ^[2] ; Minjin,Kwon ^[3] ; Hyeonjeong,Sun ^[3] ; Jiyoung,Bang ^[2] ; Hyungbeen,Ju ^[2] ; Eunsuk,Choi ^[3] ; Seung-Beck,Lee ^[1]

作者单位： Institute of Nano Science and Technology, Hanyang University, Seoul, Republic of Korea. ^[1] Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, Republic of Korea. ^[2] Department of Electronic Engineering, Hanyang University, Seoul, Republic of Korea. ^[3]

关键词 band-to-band tunneling heterojunction silicon transistor transition metal dichalcogenide

DOI 10.1088/1361-6528/ac96f7

PMID 36191522

发布时间 2022-11-07

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