Comparison of the Material Quality of Al<sub>x</sub>In<sub>1-x</sub>N (x-0-0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering.

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作者： Michael,Sun ^[1] ; Rodrigo,Blasco ^[1] ; Julian,Nwodo ^[2] ; María,de la Mata ^[3] ; Sergio I,Molina ^[4] ; Akhil,Ajay ^[4] ; Eva,Monroy ^[5] ; Sirona,Valdueza-Felip ^[5] ; Fernando B,Naranjo ^[1]

作者单位： Photonics Engineering Group, Electronics Department, University of Alcalá, Madrid-Barcelona Road km 33.6, 28871 Alcalá de Henares, Spain. ^[1] Science, Computations and Technology Department, European University of Madrid, Tajo Street s/n, 28670 Villaviciosa de Odón, Spain. ^[2] Fort Hare Institute of Technology, University of Fort Hare, Alice 5700, South Africa. ^[3] Departamento Ciencia de los Materiales, I.M. y Q.I., IMEYMAT, Universidad de Cádiz, Campus Río San Pedro s/n, Puerto Real, 11510 Cádiz, Spain. ^[4] CEA-Grenoble, INAC/PHELIQS, 17 av. des Martyrs, 38054 Grenoble, France. ^[5]

关键词 AlInN Si(100)Si(111)radio-frequency sputtering

DOI 10.3390/ma15207373

PMID 36295439

发布时间 2022-10-30

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准确一般字义偏差语意偏离译文作用小提交