Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO<sub>2</sub>/n++-Si RRAM Devices.

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作者： Piotr,Wiśniewski ^[1] ; Mateusz,Nieborek ^[2] ; Andrzej,Mazurak ^[1] ; Jakub,Jasiński ^[3]

作者单位： Centre for Advanced Materials and Technologies CEZAMAT, Warsaw University of Technology, 02-822 Warsaw, Poland. ^[1] Center for Terahertz Research and Applications (CENTERA), Institute of High-Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland. ^[2] Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 00-662 Warsaw, Poland. ^[3]

关键词 MIS MOS RRAM SCLC TDDB Weibull memristor resistive switching silicon oxide temperature measurements

DOI 10.3390/mi13101641

PMID 36295994

发布时间 2022-10-30

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2022年13卷10期

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Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO<sub>2</sub>/n++-Si RRAM Devices.

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Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO<sub>2</sub>/n++-Si RRAM Devices.

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