作者单位：
Laboratory of Functional Diagnostics of Low-Dimensional Structures for Nanoelectronics, Department of Physics, Novosibirsk State University, Pirogova Str., 2, 630090 Novosibirsk, Russia.;Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrentyev Ave. 13, 630090 Novosibirsk, Russia.
[1]
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrentyev Ave. 13, 630090 Novosibirsk, Russia.
[2]
Laboratory of Functional Diagnostics of Low-Dimensional Structures for Nanoelectronics, Department of Physics, Novosibirsk State University, Pirogova Str., 2, 630090 Novosibirsk, Russia.;Federal Research Center Boreskov Institute of Catalysis, Siberian Branch of the Russian Academy of Sciences, Prospekt Lavrentieva, 5, 630090 Novosibirsk, Russia.
[3]
Federal Research Center Boreskov Institute of Catalysis, Siberian Branch of the Russian Academy of Sciences, Prospekt Lavrentieva, 5, 630090 Novosibirsk, Russia.
[4]
DOI
10.3390/mi13111917
PMID
36363938
发布时间
2024-09-08
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