Experimental and Modeling Study of Metal-Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices.

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作者： Gianluca,Milano ^[1] ; Enrique,Miranda ^[2] ; Matteo,Fretto ^[1] ; Ilia,Valov ^[3] ; Carlo,Ricciardi ^[4]

作者单位： Advanced Materials Metrology and Life Sciences Division, INRiM (Istituto Nazionale di Ricerca Metrologica), Strada delle Cacce 91, 10135Torino, Italy. ^[1] Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), 08193Cerdanyola del Vallès, Spain. ^[2] JARA─Fundamentals for Future Information Technology, 52425Jülich, Germany.;Peter-Grünberg-Institut (PGI 7), Forschungszentrum Jülich, Wilhelm-Johnen-Straße, 52425Jülich, Germany. ^[3] Department of Applied Science and Technology, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129Torino, Italy. ^[4]

关键词 memristive devices metal?insulator interfaces nanowires resistive switching schottky barriers

DOI 10.1021/acsami.2c11022

PMID 36396122

发布时间 2024-09-08

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