换一批Improved Performance of the Al<sub>2</sub>O<sub>3</sub>-Protected HfO<sub>2</sub>-TiO<sub>2</sub> Base Layer with a Self-Assembled CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> Heterostructure for Extremely Low Operating Voltage and Stable Filament Formation in Nonvolatile Resistive Switching Memory.
第一作者：
Twinkle,George
第一单位：
Advanced Functional Nanomaterials Research Laboratory, Centre for Nanoscience and Technology, Madanjeet School of Green Energy Technologies, Pondicherry University (A Central University), Dr. R. Vankataraman Nagar, Kalapet, Puducherry605014, India.
作者：
DOI
10.1021/acsami.2c13478
PMID
36397313
发布时间
2022-11-18
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ACS applied materials & interfaces
51066-51083页
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