Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity.

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作者： Surajit,Chakraborty ^[1] ; Walid,Amir ^[1] ; Ju-Won,Shin ^[1] ; Ki-Yong,Shin ^[1] ; Chu-Young,Cho ^[2] ; Jae-Moo,Kim ^[2] ; Takuya,Hoshi ^[3] ; Takuya,Tsutsumi ^[3] ; Hiroki,Sugiyama ^[3] ; Hideaki,Matsuzaki ^[3] ; Hyuk-Min,Kwon ^[4] ; Dae-Hyun,Kim ^[5] ; Tae-Woo,Kim ^[1]

作者单位： Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan 44610, Republic of Korea. ^[1] Korea Advance Nano Fab Center, Suwon-si 16229, Gyeonggi-do, Republic of Korea. ^[2] NTT Device Technology Laboratories, NTT Corporation, Kanagawa 243-0198, Japan. ^[3] Department of Semiconductor Processing Equipment, Semiconductor Convergence Campus of Korea Polytechnics, Anseong-si 17550, Republic of Korea. ^[4] School of Electronics Engineering, Kyungpook National University, 80 Daehak-ro, Buk-gu, Daegu 41566, Republic of Korea. ^[5]

关键词 AlGaN/GaN modeling self-heating phenomenon substrates thermal resistance

DOI 10.3390/ma15238415

PMID 36499910

发布时间 2022-12-21

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