A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory.

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作者： Harry,Chung ^[1] ; Hyungsoon,Shin ^[1] ; Jisun,Park ^[2] ; Wookyung,Sun ^[3]

作者单位： Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Republic of Korea.;Graduate Program in Smart Factory, Ewha Womans University, Seoul 03760, Republic of Korea. ^[1] Graduate Program in Smart Factory, Ewha Womans University, Seoul 03760, Republic of Korea. ^[2] Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea. ^[3]

关键词 HSPICE memristive device memristor resistive random-access memory (RRAM)resistive switching

DOI 10.3390/ma16010182

PMID 36614520

发布时间 2024-09-10

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