作者：
Aleksei V,Almaev [1]
;
Viktor V,Kopyev [2]
;
Vadim A,Novikov [1]
;
Andrei V,Chikiryaka [1]
;
Nikita N,Yakovlev [3]
;
Abay B,Usseinov [1]
;
Zhakyp T,Karipbayev [4]
;
Abdirash T,Akilbekov [4]
;
Zhanymgul K,Koishybayeva [4]
;
Anatoli I,Popov [4]
作者单位：
Research and Development Center for Advanced Technologies in Microelectronics, National Research Tomsk State University, 634050 Tomsk, Russia.
[1]
Fokon LLC, 248035 Kaluga, Russia.
[2]
Ioffe Institute of the Russian Academy of Sciences, 194021 Saint Petersburg, Russia.
[3]
Faculty of Physics and Technical Sciences, L.N. Gumilyov Eurasian National University, Astana 010008, Kazakhstan.
[4]
Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga, Latvia.
[5]
DOI
10.3390/ma16010342
PMID
36614681
发布时间
2023-01-11
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