Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation.

导出 LinkOut

翻译打印收藏纠错

第一作者： Zhifang,Zhu

第一单位： Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.

作者： Zhifang,Zhu ^[1] ; Tao,Tao ^[2] ; Bin,Liu ^[1] ; Ting,Zhi ^[2] ; Yang,Chen ^[1] ; Junchi,Yu ^[2] ; Di,Jiang ^[3] ; Feifan,Xu ^[4] ; Yimeng,Sang ^[1] ; Yu,Yan ^[2] ; Zili,Xie ^[1] ; Rong,Zhang ^[2]

作者单位： Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China. ^[1] Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China. ^[2] College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China. ^[3] Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China. ^[4] Xiamen University, Xiamen 361005, China. ^[5]

关键词 Micro-LED passivation process sidewall damage

DOI 10.3390/mi14010010

PMID 36677072

发布时间 2023-03-28

翻译满意度评价：

准确一般字义偏差语意偏离译文作用小提交

浏览0

Micromachines

2022年14卷1期

相似文献

中文期刊
外文期刊
学位论文
会议论文

检索历史清除

Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation.

Micromachines

相似文献

Micromachines

相关期刊

参考文献：
指定格式：	NoteExpress EndNote RefWorks NoteFirst

检索历史 清除

Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation.

Micromachines

相似文献

Micromachines

相关期刊

检索历史清除