Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate.

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第一作者： Seung Heon,Shin

第一单位： Department of Semiconductor Process Equipment, Semiconductor Convergence Campus, Korea Polytechnics, 41-12, Songwon-gil, Gongdo-eup, Anseong-si 17550, Republic of Korea.

作者： Seung Heon,Shin ^[1] ; Jae-Phil,Shim ^[2] ; Hyunchul,Jang ^[2] ; Jae-Hyung,Jang ^[3]

作者单位： Department of Semiconductor Process Equipment, Semiconductor Convergence Campus, Korea Polytechnics, 41-12, Songwon-gil, Gongdo-eup, Anseong-si 17550, Republic of Korea. ^[1] Device Technology Division, Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si 16229, Republic of Korea. ^[2] Department of Energy Engineering, Korea Institute of Energy Technology, 200, Hyeoksin-ro, Naju-si 58330, Republic of Korea. ^[3]

关键词 GaAs HEMT In0.53Ga0.47As/InAs/In0.53Ga0.47As composite channel InAs HEMT InGaAs HEMT InGaAs/InAs/InGaAs composite channel Mo-based Ohmic contact mHEMT

DOI 10.3390/mi14010056

PMID 36677117

发布时间 2023-02-01

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2022年14卷1期

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Fabrication and Characterization of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate.

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Fabrication and Characterization of In<sub>0.53</sub>Ga<sub>0.47</sub>As/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate.

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