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Molecular Dynamics Simulation Analysis of Damage and Expansion Process of Nanoindentation Single-Crystal 3C-SiC Carbide Specimens at Different Temperature.

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第一作者： Xiang,Ning

第一单位： School of Mechanical and Electronic Engineering, Jingdezhen Ceramic University, Jingdezhen 333403, China.

作者： Xiang,Ning ^[1] ; Nanxing,Wu ^[2] ; Mengjuan,Zhong ^[1] ; Yuwei,Wen ^[1] ; Bin,Li ^[1] ; Yi,Jiang ^[1]

作者单位： School of Mechanical and Electronic Engineering, Jingdezhen Ceramic University, Jingdezhen 333403, China. ^[1] School of Mechanical and Electronic Engineering, Jingdezhen Ceramic University, Jingdezhen 333403, China.;Laboratory of Ceramic Material Processing Technology Engineering, Jingdezhen 333403, China. ^[2]

关键词 3C-SiC dislocation evolution nanoindentation stress strain temperature

DOI 10.3390/nano13020235

PMID 36677988

发布时间 2023-02-01

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Nanomaterials (Basel, Switzerland)

2023年13卷2期

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Nanomaterials (Basel, Switzerland)

2023年13卷2期

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Molecular Dynamics Simulation Analysis of Damage and Expansion Process of Nanoindentation Single-Crystal 3C-SiC Carbide Specimens at Different Temperature.

Nanomaterials (Basel, Switzerland)

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Molecular Dynamics Simulation Analysis of Damage and Expansion Process of Nanoindentation Single-Crystal 3C-SiC Carbide Specimens at Different Temperature.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

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