Thickness-Dependent Topological Hall Effect in 2D Cr<sub>5</sub> Si<sub>3</sub> Nanosheets with Noncollinear Magnetic Phase.

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第一作者： Bailing,Li

第一单位： Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China.

作者： Bailing,Li ^[1] ; Hongmei,Zhang ^[1] ; Quanyang,Tao ^[2] ; Xiaohua,Shen ^[1] ; Ziwei,Huang ^[1] ; Kun,He ^[3] ; Chen,Yi ^[3] ; Xu,Li ^[2] ; Liqiang,Zhang ^[1] ; Zucheng,Zhang ^[1] ; Jialing,Liu ^[1] ; Jingmei,Tang ^[1] ; Yucheng,Zhou ^[1] ; Di,Wang ^[1] ; Xiangdong,Yang ^[4] ; Bei,Zhao ^[5] ; Ruixia,Wu ^[2] ; Jia,Li ^[1] ; Bo,Li ^[6] ; Xidong,Duan ^[1]

作者单位： Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China. ^[1] School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China. ^[2] School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China.;Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, P. R. China. ^[3] Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China. ^[4] School of Physics, Southeast University, Nanjing, 211189, P. R. China. ^[5] Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, P. R. China.;Shenzhen Research Institute of Hunan University, Shenzhen, 518063, P. R. China. ^[6]

关键词 2D nonlayered materials complementary metal-oxide-semiconductor noncollinear antiferromagnets perpendicular magnetic anisotropy topological Hall effect

DOI 10.1002/adma.202210755

PMID 36719342

发布时间 2023-04-20

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