Characterizing Density and Spatial Distribution of Trap States in Ta<sub>3</sub>N<sub>5</sub> Thin Films for Rational Defect Passivation.

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第一作者： Peter N,Rudd

第一单位： Department of Applied Physical Sciences, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States.

作者： Peter N,Rudd ^[1] ; Stephen J,Tereniak ^[2] ; Rene,Lopez ^[1]

作者单位： Department of Applied Physical Sciences, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States. ^[1] Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States. ^[2] Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States. ^[3]

关键词 defect passivation drive-level capacitance profiling hybrid photoelectrode oxynitride silatrane surface modification tantalum nitride

DOI 10.1021/acsami.2c19275

PMID 36734937

发布时间 2023-02-16

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