Polarization Doping in a GaN-InN System-Ab Initio Simulation.

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第一作者： Ashfaq,Ahmad

第一单位： Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.

作者： Ashfaq,Ahmad ^[1] ; Pawel,Strak ^[1] ; Pawel,Kempisty ^[2] ; Konrad,Sakowski ^[3] ; Jacek,Piechota ^[1] ; Yoshihiro,Kangawa ^[4] ; Izabella,Grzegory ^[1] ; Michal,Leszczynski ^[1] ; Zbigniew R,Zytkiewicz ^[5] ; Grzegorz,Muziol ^[1] ; Eva,Monroy ^[6] ; Agata,Kaminska ^[7] ; Stanislaw,Krukowski ^[1]

作者单位： Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland. ^[1] Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.;Research Institute for Applied Mechanics, Kyushu University, Fukuoka 816-8580, Japan. ^[2] Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.;Institute of Applied Mathematics and Mechanics, University of Warsaw, 02-097 Warsaw, Poland. ^[3] Research Institute for Applied Mechanics, Kyushu University, Fukuoka 816-8580, Japan. ^[4] Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw, Poland. ^[5] University Grenoble-Alpes, CEA, Grenoble INP, IRIG, PHELIQS, 17 av. des Martyrs, 38000 Grenoble, France. ^[6] Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.;Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw, Poland.;Faculty of Mathematics and Natural Sciences, School of Exact Sciences, Cardinal Stefan Wyszynski University, Dewajtis 5, 01-815 Warsaw, Poland. ^[7]

关键词 InGaN graded layer nitrides polarization doping

DOI 10.3390/ma16031227

PMID 36770233

发布时间 2024-09-12

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Materials (Basel, Switzerland)

2023年16卷3期

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Polarization Doping in a GaN-InN System-Ab Initio Simulation.

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Polarization Doping in a GaN-InN System-Ab Initio Simulation.

Materials (Basel, Switzerland)

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