Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells.

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第一作者： Haoran,Sun

第一单位： Department of Applied Physics, China Agricultural University, Beijing 100083, China.

作者： Haoran,Sun ^[1] ; Yuhui,Chen ^[1] ; Yuhao,Ben ^[2] ; Hongping,Zhang ^[3] ; Yujie,Zhao ^[3] ; Zhihao,Jin ^[3] ; Guoqi,Li ^[4] ; Mei,Zhou ^[1]

作者单位： Department of Applied Physics, China Agricultural University, Beijing 100083, China. ^[1] State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. ^[2] College of Science, China Agricultural University, Beijing 100083, China. ^[3] Science and Technology on Reliability and Environment Engineering Laboratory, School of Reliability and Systems Engineering, Beihang University, Beijing 100191, China. ^[4]

关键词 InGaN/GaN MQW cap layer localized state luminescence characteristics

DOI 10.3390/ma16041558

PMID 36837187

发布时间 2023-02-28

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