Effects of Charge Trapping on Memory Characteristics for HfO<sub>2</sub>-Based Ferroelectric Field Effect Transistors.

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作者： Jianjian,Wang ^[1] ; Jinshun,Bi ^[2] ; Yannan,Xu ^[1] ; Gang,Niu ^[2] ; Mengxin,Liu ^[1] ; Viktor,Stempitsky ^[3]

作者单位： Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. ^[1] School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China. ^[2] School of Electronic Science, Xi'an Jiaotong University, Xi'an 710049, China. ^[3] Beijing Zhongke New Micro Technology Department Co., Ltd., Beijing 100029, China. ^[4] Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 220015 Minsk, Belarus. ^[5]

关键词 HfO2-based FeFET TCAD charge trapping conductance modulation ferroelectric switching memory window pulse amplitude pulse width

DOI 10.3390/nano13040638

PMID 36839006

发布时间 2023-02-28

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Nanomaterials (Basel, Switzerland)

2023年13卷4期

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Effects of Charge Trapping on Memory Characteristics for HfO<sub>2</sub>-Based Ferroelectric Field Effect Transistors.

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Effects of Charge Trapping on Memory Characteristics for HfO<sub>2</sub>-Based Ferroelectric Field Effect Transistors.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

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