Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications.

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第一作者： A,Zaslavsky

第一单位： School of Engineering, Brown University, Providence, Rhode Island 02912, USA.;Nanoscale Device Characterization Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.

作者： A,Zaslavsky ^[1] ; C A,Richter ^[2] ; P R,Shrestha ^[3] ; B D,Hoskins ^[2] ; S T,Le ^[3] ; A,Madhavan ^[4] ; J J,McClelland ^[2]

作者单位： School of Engineering, Brown University, Providence, Rhode Island 02912, USA.;Nanoscale Device Characterization Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA. ^[1] Nanoscale Device Characterization Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA. ^[2] Nanoscale Device Characterization Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.;Theiss Research, La Jolla, California 92037, USA. ^[3] Nanoscale Device Characterization Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.;University of Maryland, College Park, Maryland 20742, USA. ^[4]

DOI 10.1063/5.0060343

PMID 36873257

发布时间 2023-03-07

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Applied physics letters

2021年119卷4期

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Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications.

Applied physics letters

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Applied physics letters

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Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications.

Applied physics letters

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Applied physics letters

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