Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy.

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第一作者： Michał,Marchewka

第一单位： Center for Microelectronics and Nanotechnology, Institute of Materials Engineering, University of Rzeszów, Al. Rejtana 16, 35-959 Rzeszów, Poland.

作者： Michał,Marchewka ^[1] ; Dawid,Jarosz ^[1] ; Marta,Ruszała ^[2] ; Anna,Juś ^[1] ; Piotr,Krzemiński ^[1] ; Dariusz,Płoch ^[1] ; Kinga,Maś ^[1] ; Renata,Wojnarowska-Nowak ^[1]

作者单位： Center for Microelectronics and Nanotechnology, Institute of Materials Engineering, University of Rzeszów, Al. Rejtana 16, 35-959 Rzeszów, Poland. ^[1] International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland. ^[2]

关键词 InAs/AlSb T2SLS molecular beam epitaxy

DOI 10.3390/ma16051968

PMID 36903083

发布时间 2023-03-13

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Materials (Basel, Switzerland)

2023年16卷5期

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Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy.

Materials (Basel, Switzerland)

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Materials (Basel, Switzerland)

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Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy.

Materials (Basel, Switzerland)

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Materials (Basel, Switzerland)

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