Charge Trapping and Emission Properties in CAAC-IGZO Transistor: A First-Principles Calculations.

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作者： Ziqi,Wang ^[1] ; Nianduan,Lu ^[2] ; Jiawei,Wang ^[3] ; Di,Geng ^[1] ; Lingfei,Wang ^[2] ; Guanhua,Yang ^[3]

作者单位： State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. ^[1] Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. ^[2] University of Chinese Academy of Sciences, Beijing 100029, China. ^[3]

关键词 c-axis aligned crystalline indium-gallium-zinc-oxide (CAAC-IGZO)carrier capture and emission first principles calculation transistor instability effect

DOI 10.3390/ma16062282

PMID 36984162

发布时间 2023-03-31

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