Design and modeling of high-performance mid-wave infrared InAsSb-based nBn photodetector using barrier band engineering approaches.

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作者： Maryam,Shaveisi ^[1] ; Peiman,Aliparast ^[2]

作者单位： Aerospace Research Institute (Ministry of Science, Research and Technology), Tehran, 1465774111, Iran. M_Shaveisi@ari.ac.ir. ^[1] Aerospace Research Institute (Ministry of Science, Research and Technology), Tehran, 1465774111, Iran. ^[2]

关键词 Grading material systems III-V compound semiconductors Mid-wave infrared detectors nBn architecture

DOI 10.1007/s12200-023-00060-9

PMID 37022594

发布时间 2023-04-09

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Frontiers of optoelectronics

2023年16卷1期

5页

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Design and modeling of high-performance mid-wave infrared InAsSb-based nBn photodetector using barrier band engineering approaches.

Frontiers of optoelectronics

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Frontiers of optoelectronics

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Design and modeling of high-performance mid-wave infrared InAsSb-based nBn photodetector using barrier band engineering approaches.

Frontiers of optoelectronics

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Frontiers of optoelectronics

相关期刊

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