作者：
Hongsong,Qiu [1]
;
Tom S,Seifert [2]
;
Lin,Huang [3]
;
Yongjian,Zhou [3]
;
Zdeněk,Kašpar [2]
;
Caihong,Zhang [1]
;
Jingbo,Wu [1]
;
Kebin,Fan [1]
;
Qi,Zhang [4]
;
Di,Wu [5]
;
Tobias,Kampfrath [2]
;
Cheng,Song [3]
;
Biaobing,Jin [1]
;
Jian,Chen [1]
;
Peiheng,Wu [1]
作者单位：
Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, P. R. China.
[1]
Department of Physics, Freie Universität Berlin, 14195, Berlin, Germany.
[2]
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China.
[3]
Department of Physics, Nanjing University, Nanjing, 210023, P. R. China.
[4]
National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures and Department of Physics, Nanjing University, Nanjing, 210023, P. R. China.
[5]
DOI
10.1002/advs.202300512
PMID
37083225
发布时间
2024-09-21
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