Ultrasensitive Near-Infrared InAs Colloidal Quantum Dot-ZnON Hybrid Phototransistor Based on a Gradated Band Structure.

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作者： Jong-Ho,Kim ^[1] ; Byung Ku,Jung ^[1] ; Su-Kyung,Kim ^[1] ; Kwang-Ro,Yun ^[1] ; Junhyuk,Ahn ^[1] ; Seongkeun,Oh ^[1] ; Min-Gyu,Jeon ^[1] ; Tae-Ju,Lee ^[2] ; Seongchan,Kim ^[3] ; Nuri,Oh ^[3] ; Soong Ju,Oh ^[1] ; Tae-Yeon,Seong ^[1]

作者单位： Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea. ^[1] Department of Nanophotonics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea. ^[2] Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04673, Republic of Korea. ^[3]

关键词 high mobility hybrid phototransistor low persistent photoconductivity effect near-infrared photodetection non-toxic materials

主题词量子点(Quantum Dots);铟(Indium);锌(Zinc);氧化物(Oxides)

DOI 10.1002/advs.202207526

PMID 37088787

发布时间 2023-07-01

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Advanced science (Weinheim, Baden-Wurttemberg, Germany)

2023年10卷18期

e2207526页

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Ultrasensitive Near-Infrared InAs Colloidal Quantum Dot-ZnON Hybrid Phototransistor Based on a Gradated Band Structure.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

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Advanced science (Weinheim, Baden-Wurttemberg, Germany)

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Ultrasensitive Near-Infrared InAs Colloidal Quantum Dot-ZnON Hybrid Phototransistor Based on a Gradated Band Structure.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

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Advanced science (Weinheim, Baden-Wurttemberg, Germany)

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