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Ultralow-noise Terahertz Detection by p-n Junctions in Gapped Bilayer Graphene.

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第一作者： Elena,Titova

第一单位： Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation.;Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow 121205, Russia.

作者： Elena,Titova ^[1] ; Dmitry,Mylnikov ^[2] ; Mikhail,Kashchenko ^[1] ; Ilya,Safonov ^[1] ; Sergey,Zhukov ^[2] ; Kirill,Dzhikirba ^[3] ; Kostya S,Novoselov ^[4] ; Denis A,Bandurin ^[5] ; Georgy,Alymov ^[2] ; Dmitry,Svintsov ^[2]

作者单位： Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation.;Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow 121205, Russia. ^[1] Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russian Federation. ^[2] Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka 142432, Russian Federation. ^[3] Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow 121205, Russia.;Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575, Singapore. ^[4] Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore. ^[5]

关键词 band gap bilayer graphene photodetection photothermoelectric effect pn junction terahertz tunnel junction

DOI 10.1021/acsnano.2c12285

PMID 37094175

发布时间 2023-05-09

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