Two-dimensional material-based complementary ambipolar field-effect transistors with ohmic-like contacts.

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作者： Jimin,Park ^[1] ; Jangyup,Son ^[2] ; Sang Kyu,Park ^[1] ; Dong Su,Lee ^[1] ; Dae-Young,Jeon ^[1]

作者单位： Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Joellabuk-do 55324, Republic of Korea. ^[1] Division of Electronics Engineering, Jeonbuk National University, Jeonju 54896, Republic of Korea. ^[2] Department of Electrical Engineering, Gyeongsang National University, Jinju 52828 Gyeongnam, Republic of Korea. ^[3]

关键词 2D materials Schottky barrier ambipolar field-effect transistors ohmic-like contacts output polarity controllable amplifiers symmetry of electron and hole current

DOI 10.1088/1361-6528/acd2e3

PMID 37146599

发布时间 2023-05-28

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