Highly Responsive Near-Infrared Si/Sb<sub>2</sub>Se<sub>3</sub> Photodetector via Surface Engineering of Silicon.

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第一作者： Yogesh,Singh

第一单位： Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India.

作者： Yogesh,Singh ^[1] ; Rahul,Parmar ^[2] ; Avritti,Srivastava ^[3] ; Reena,Yadav ^[1] ; Kapil,Kumar ^[2] ; Sanju,Rani ^[1] ; Shashi ^[2] ; Sanjay K,Srivastava ^[1] ; Sudhir,Husale ^[2] ; Mahesh,Sharma ^[1] ; Sunil Singh,Kushvaha ^[2] ; Vidya Nand,Singh ^[4]

作者单位： Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India. ^[1] CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110012, India. ^[2] Elettra Sincrotrone, s.s. 14 km 163,500 in Area Science Park, 34149, Basovizza Trieste Italy. ^[3] Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400 005, India. ^[4]

关键词 Carrier lifetime Photodetector Sb2Se3 Surface engineering Surface plasmon

DOI 10.1021/acsami.3c04043

PMID 37326513

发布时间 2023-06-29

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