Schottky barrier height engineering on MoS<sub>2</sub> field-effect transistors using a polymer surface modifier on a contact electrode.

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第一作者： Dongwon,Choi

第一单位： Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, South Korea.;Department of Electrical Engineering, Korea University, Seoul, 02841, South Korea.

作者： Dongwon,Choi ^[1] ; Jeehoon,Jeon ^[2] ; Tae-Eon,Park ^[2] ; Byeong-Kwon,Ju ^[3] ; Ki-Young,Lee ^[4]

作者单位： Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, South Korea.;Department of Electrical Engineering, Korea University, Seoul, 02841, South Korea. ^[1] Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, South Korea. ^[2] Department of Electrical Engineering, Korea University, Seoul, 02841, South Korea. bkju@korea.ac.kr. ^[3] Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, South Korea. kylee80@kist.re.kr. ^[4]

关键词 MoS2 FET Photoelectric effect Polyethylenimine Schottky barrier height Thermionic emission

DOI 10.1186/s11671-023-03855-z

PMID 37382714

发布时间 2023-07-03

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2023年18卷1期

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Schottky barrier height engineering on MoS<sub>2</sub> field-effect transistors using a polymer surface modifier on a contact electrode.

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Schottky barrier height engineering on MoS<sub>2</sub> field-effect transistors using a polymer surface modifier on a contact electrode.

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