Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In<sub>0.8</sub>Ga<sub>0.2</sub>As Photodetectors.

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第一作者： Peng,Cao

第一单位： Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

作者： Peng,Cao ^[1] ; Tiancai,Wang ^[2] ; Hongling,Peng ^[1] ; Qiandong,Zhuang ^[3] ; Wanhua,Zheng ^[1]

作者单位： Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. ^[1] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China. ^[2] College of Electronic and Communication Engineering, University of Chinese Academy of Sciences, Beijing 101408, China. ^[3] State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. ^[4] Physics Department, Lancaster University, Lancaster LA1 4YB, UK. ^[5]

关键词 InGaAs MBE growth dark current

DOI 10.3390/ma16134538

PMID 37444852

发布时间 2023-07-18

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Materials (Basel, Switzerland)

2023年16卷13期

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Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In<sub>0.8</sub>Ga<sub>0.2</sub>As Photodetectors.

Materials (Basel, Switzerland)

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Materials (Basel, Switzerland)

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Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In<sub>0.8</sub>Ga<sub>0.2</sub>As Photodetectors.

Materials (Basel, Switzerland)

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Materials (Basel, Switzerland)

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