Change in Electrical/Mechanical Properties of Plasma Polymerized Low Dielectric Constant Films after Etching in CF<sub>4</sub>/O<sub>2</sub> Plasma for Semiconductor Multilevel Interconnects.

导出 OA

翻译打印收藏纠错

作者： Namwuk,Baek ^[1] ; Yoonsoo,Park ^[1] ; Hyuna,Lim ^[2] ; Jihwan,Cha ^[1] ; Taesoon,Jang ^[1] ; Shinwon,Kang ^[1] ; Seonhee,Jang ^[3] ; Donggeun,Jung ^[1]

作者单位： Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea. ^[1] Foundry Metal Technology Team, Samsung Electronics, 190 Seoku-dong, Hwaseong-si 18448, Republic of Korea. ^[2] Department of Mechanical Engineering, University of Louisiana at Lafayette, Lafayette, LA 70503, USA. ^[3]

关键词 intermetal dielectric low dielectric material plasma-enhanced chemical-vapor deposition reactive ion etching tetrakis(trimethylsilyoxy)silane

DOI 10.3390/ma16134663

PMID 37444981

发布时间 2023-07-18

翻译满意度评价：

准确一般字义偏差语意偏离译文作用小提交