Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate.

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作者： Xiangjun,Shang ^[1] ; Xiangbin,Su ^[2] ; Hanqing,Liu ^[1] ; Huiming,Hao ^[2] ; Shulun,Li ^[1] ; Deyan,Dai ^[2] ; Mifeng,Li ^[3] ; Ying,Yu ^[1] ; Yu,Zhang ^[2] ; Guowei,Wang ^[1] ; Yingqiang,Xu ^[2] ; Haiqiao,Ni ^[1] ; Zhichuan,Niu ^[2]

作者单位： State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. ^[1] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China. ^[2] Beijing Academy of Quantum Information Sciences, Beijing 100193, China. ^[3] State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China. ^[4]

关键词 T-dependent state population arsenic influence deposition deposition amount full width at half maximum growth rate growth temperature in situ annealing migration nucleation nucleation site photoluminescence spectrum quantum dot density quantum dot size distribution reconstruction phase self-assembled quantum dots surface arsenic

DOI 10.3390/nano13131959

PMID 37446475

发布时间 2023-07-18

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Nanomaterials (Basel, Switzerland)

2023年13卷13期

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Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

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Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

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