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Implementation of Gate-All-Around Gate-Engineered Charge Plasma Nanowire FET-Based Common Source Amplifier.

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第一作者： Sarabdeep,Singh

第一单位： Model Institute of Engineering and Technology, Jammu 181122, India.

作者： Sarabdeep,Singh ^[1] ; Leo Raj,Solay ^[2] ; Sunny,Anand ^[2] ; Naveen,Kumar ^[3] ; Ravi,Ranjan ^[4] ; Amandeep,Singh ^[5]

作者单位： Model Institute of Engineering and Technology, Jammu 181122, India. ^[1] Department of Electronics and Communication Engineering, Amity University, Noida 201313, India. ^[2] Department of Electronics and Nanoscale Engineering, University of Glasgow, Glasgow G12 8QQ, UK. ^[3] Dr. B. R. Ambedkar National Institute of Technology, Jalandhar 144008, India. ^[4] National Institute of Technology, Srinagar 190006, India. ^[5]

关键词 Nanowire FET charge plasma common source amplifier dual-material channel gate stacking single-material gate

DOI 10.3390/mi14071357

PMID 37512666

发布时间 2023-07-31

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