Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures.

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第一作者： Bo,Yang

第一单位： State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.

作者： Bo,Yang ^[1] ; Yizhen,Yu ^[2] ; Guixue,Zhang ^[1] ; Xiumei,Shao ^[2] ; Xue,Li ^[1]

作者单位： State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China. ^[1] Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China. ^[2]

关键词 InGaAs detector Mie antireflection nanostructure visible-extended

DOI 10.3390/s23146556

PMID 37514850

发布时间 2023-07-31

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