首页> Sensors (Basel, Switzerland)> Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-<i>k</i> Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors.

Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-<i>k</i> Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors.

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第一作者： Tae-Hwan,Hyun

第一单位： Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Republic of Korea.

作者： Tae-Hwan,Hyun ^[1] ; Won-Ju,Cho ^[1]

作者单位： Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Republic of Korea. ^[1]

关键词 biosensor calcium ion-selective capacitive coupling dual-gate field-effect transistor extended gate high-k gate dielectric engineering self-amplification silicon nanowire random network

DOI 10.3390/s23156720

PMID 37571503

发布时间 2023-08-15

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2023年23卷15期

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Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-<i>k</i> Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors.

Sensors (Basel, Switzerland)

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Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-<i>k</i> Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors.

Sensors (Basel, Switzerland)

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Sensors (Basel, Switzerland)

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