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Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect.

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第一作者： Chenyu,Yin

第一单位： Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi'an 710071, China.

作者： Chenyu,Yin ^[1] ; Tianzhi,Gao ^[1] ; Hao,Wei ^[1] ; Yaolin,Chen ^[1] ; Hongxia,Liu ^[1]

作者单位： Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi'an 710071, China. ^[1]

关键词 3D device simulation SRAM bipolar amplification effect charge sharing effect fully depleted silicon-on-insulator (FDSOI)single event upset (SEU)

DOI 10.3390/mi14081620

PMID 37630156

发布时间 2023-08-28

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Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect.

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Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect.

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