Fabrication of a Field-Effect Transistor Based on 2D Novel Ternary Chalcogenide PdPS.

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第一作者： Bom,Lee

第一单位： School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.

作者： Bom,Lee ^[1] ; Byung Joo,Jeong ^[1] ; Kyung Hwan,Choi ^[2] ; Sooheon,Cho ^[1] ; Jiho,Jeon ^[2] ; Jinsu,Kang ^[1] ; Xiaojie,Zhang ^[1] ; Hyeon-Seok,Bang ^[3] ; Hyung-Suk,Oh ^[4] ; Jae-Hyun,Lee ^[5] ; Hak Ki,Yu ^[5] ; Jae-Young,Choi ^[6]

作者单位： School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea. ^[1] SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea. ^[2] School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.;Clean Energy Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea. ^[3] School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.;Clean Energy Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea.;KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea. ^[4] Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea. ^[5] School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.;SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea.;KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea. ^[6]

关键词 2D van der Waals material Field-effect transistor Fowler?Nordheim tunneling PdPS Schottky barrier height

DOI 10.1021/acsami.3c09679

PMID 37657071

发布时间 2023-09-13

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