Large-Scale Complementary Logic Circuit Enabled by Al<sub>2</sub>O<sub>3</sub> Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide.

导出 LinkOut

翻译打印收藏纠错

作者： Tanmoy,Das ^[1] ; Sukhyeong,Youn ^[2] ; Jae Eun,Seo ^[1] ; Eunyeong,Yang ^[2] ; Jiwon,Chang ^[1]

作者单位： Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea. ^[1] Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea. ^[2]

关键词 aluminum oxide passivation carrier density modulation large-area circuit two-dimensional materials

DOI 10.1021/acsami.3c09351

PMID 37713451

发布时间 2023-09-27

翻译满意度评价：

准确一般字义偏差语意偏离译文作用小提交

浏览0

ACS applied materials & interfaces

2023年15卷38期

45116-45127页

相似文献

中文期刊
外文期刊
学位论文
会议论文

检索历史清除

Large-Scale Complementary Logic Circuit Enabled by Al<sub>2</sub>O<sub>3</sub> Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide.

ACS applied materials & interfaces

相似文献

ACS applied materials & interfaces

相关期刊

参考文献：
指定格式：	NoteExpress EndNote RefWorks NoteFirst

检索历史 清除

Large-Scale Complementary Logic Circuit Enabled by Al<sub>2</sub>O<sub>3</sub> Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide.

ACS applied materials & interfaces

相似文献

ACS applied materials & interfaces

相关期刊

检索历史清除