Parametric Analysis of Indium Gallium Arsenide Wafer-based Thin Body (5 nm) Double-gate MOSFETs for Hybrid RF Applications.

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第一作者： Pattunnarajam,Paramasivam

第一单位： Department of Electronics and Communication Engineering, Prince Shri Venkateshwara Padmavathy Engineering College, Chennai, 600127, India.

作者： Pattunnarajam,Paramasivam ^[1] ; Naveenbalaji,Gowthaman ^[2] ; Viranjay M,Srivastava ^[2]

作者单位： Department of Electronics and Communication Engineering, Prince Shri Venkateshwara Padmavathy Engineering College, Chennai, 600127, India. ^[1] Department of Electronic Engineering, Howard College, University of KwaZulu- Natal, Durban, 4041, South Africa. ^[2]

关键词 Fermi-dirac statistics NEGF VLSI.flat-band voltage microelectronics nanotechnologies

DOI 10.2174/1872210517666230602095347

PMID 37723950

发布时间 2024-06-07

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