Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors.

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作者： Changyong,Oh ^[1] ; Taehyeon,Kim ^[2] ; Myeong Woo,Ju ^[3] ; Min Young,Kim ^[1] ; So Hee,Park ^[2] ; Geon Hyeong,Lee ^[1] ; Hyunwuk,Kim ^[1] ; SeHoon,Kim ^[1] ; Bo Sung,Kim ^[4]

作者单位： Department of Applied Physics, Korea University, Sejong 30019, Republic of Korea. ^[1] E·ICT-Culture·Sports Track, Korea University, Sejong 30019, Republic of Korea. ^[2] Memory Diffusion Technology Team, Samsung Electronics, Pyeongtaek-si 17786, Republic of Korea. ^[3] Display Development Division, ENF Technology Co., Ltd., Yongin-si 17084, Republic of Korea. ^[4]

关键词 InGaZnO (IGZO)UV treatment ozone annealing stripper damage top-gate thin-film transistors

DOI 10.3390/ma16186161

PMID 37763439

发布时间 2023-09-30

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