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(Bi,Sb)2 Se3 Alloy Thin Film for Short-Wavelength Infrared Photodetector and TFT Monolithic-Integrated Matrix Imaging.

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第一作者： Ruisi,Gao

第一单位： School of Integrated Circuits, Engineering Research Center for Functional Ceramics MOE, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China.

作者： Ruisi,Gao ^[1] ; Xin,He ^[2] ; Chao,Chen ^[1] ; Xiaoqing,Bao ^[1] ; Feifan,Yang ^[1] ; Xuke,Yang ^[1] ; Jungang,He ^[3] ; Chong,Dong ^[1] ; Chuanhao,Li ^[4] ; Shuo,Chen ^[4] ; Guangxing,Liang ^[4] ; Shenglin,Jiang ^[1] ; Jiang,Tang ^[1] ; Guangzu,Zhang ^[1] ; Kanghua,Li ^[1]

作者单位： School of Integrated Circuits, Engineering Research Center for Functional Ceramics MOE, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China. ^[1] Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, Jianghan University, Wuhan, 430056, P. R. China. ^[2] Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China. ^[3] Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, P. R. China. ^[4]

关键词 (Bi,Sb)2Se3 photodetectors short-wavelength infrared thin films thin-film transistor (TFT)?matrix imaging

DOI 10.1002/smll.202308070

PMID 37849040

发布时间 2024-03-01

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