Pressure-induced novel ZrN<sub>4</sub> semiconductor materials with high dielectric constants: a first-principles study.

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第一作者： Shaoting,Yao

第一单位： School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China. mrwen@gdut.edu.cn.

作者： Shaoting,Yao ^[1] ; Junzhao,Li ^[1] ; Le,Huang ^[2] ; Xing,Xie ^[3] ; Huafeng,Dong ^[1] ; Hui,Long ^[1] ; Xin,Zhang ^[1] ; Fugen,Wu ^[2] ; Zhongfei,Mu ^[4] ; Minru,Wen ^[1]

作者单位： School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China. mrwen@gdut.edu.cn. ^[1] School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China. ^[2] School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China. ^[3] Experimental Teaching Department, Guangdong University of Technology, Guangzhou, 510006, China. ^[4]

DOI 10.1039/d3cp03949h

PMID 37850232

发布时间 2023-11-01

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Physical chemistry chemical physics

2023年25卷42期

28727-28734页

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Pressure-induced novel ZrN<sub>4</sub> semiconductor materials with high dielectric constants: a first-principles study.

Physical chemistry chemical physics

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Pressure-induced novel ZrN<sub>4</sub> semiconductor materials with high dielectric constants: a first-principles study.

Physical chemistry chemical physics

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Physical chemistry chemical physics

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