Electronic Structure and Transport Properties of Bi2Te3 and Bi2Se3 Single Crystals.

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作者： Vyacheslav V,Marchenkov ^[1] ; Alexey V,Lukoyanov ^[2] ; Semyon T,Baidak ^[1] ; Alexandra N,Perevalova ^[2] ; Bogdan M,Fominykh ^[1] ; Sergey V,Naumov ^[2] ; Elena B,Marchenkova ^[1]

作者单位： M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620108 Ekaterinburg, Russia. ^[1] Institute of Physics and Technology, Ural Federal University Named after the First President of Russia B.N. Yeltsin, 620002 Ekaterinburg, Russia. ^[2]

关键词 2D materials Bi2Se3 Bi2Te3 DFT Hall effect current carrier concentration electronic structure materials informatics topological insulator topological resistivity

DOI 10.3390/mi14101888

PMID 37893325

发布时间 2023-10-31

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2023年14卷10期

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Electronic Structure and Transport Properties of Bi<sub>2</sub>Te<sub>3</sub> and Bi<sub>2</sub>Se<sub>3</sub> Single Crystals.

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Electronic Structure and Transport Properties of Bi<sub>2</sub>Te<sub>3</sub> and Bi<sub>2</sub>Se<sub>3</sub> Single Crystals.

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