Design and Fabrication of High Performance InGaAs near Infrared Photodetector.

导出 LinkOut

翻译打印收藏纠错

第一作者： Hezhuang,Liu

第一单位： Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China.

作者： Hezhuang,Liu ^[1] ; Jingyi,Wang ^[2] ; Daqian,Guo ^[1] ; Kai,Shen ^[1] ; Baile,Chen ^[2] ; Jiang,Wu ^[1]

作者单位： Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China. ^[1] School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China. ^[2]

关键词 dark current low capacitance near infrared photodiode quantum efficiency

DOI 10.3390/nano13212895

PMID 37947739

发布时间 2023-11-17

翻译满意度评价：

准确一般字义偏差语意偏离译文作用小提交

浏览0

Nanomaterials (Basel, Switzerland)

2023年13卷21期

相似文献

中文期刊
外文期刊
学位论文
会议论文

检索历史清除

Design and Fabrication of High Performance InGaAs near Infrared Photodetector.

Nanomaterials (Basel, Switzerland)

相似文献

Nanomaterials (Basel, Switzerland)

相关期刊

参考文献：
指定格式：	NoteExpress EndNote RefWorks NoteFirst

检索历史 清除

Design and Fabrication of High Performance InGaAs near Infrared Photodetector.

Nanomaterials (Basel, Switzerland)

相似文献

Nanomaterials (Basel, Switzerland)

相关期刊

检索历史清除